Пошуковий запит: (<.>A=Sachenko A$<.>) |
Загальна кількість знайдених документів : 55
Представлено документи з 1 до 20
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| 1. |
Gorban A. P. Efficiency limit for diffusion silicon solar cells at concentrated illumination. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Sachenko A. V. On the collection of photocurrent in solar cells with a contact grid. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 3. |
Gorban A. P. Impact of excess charge carrier concentration on effective surface recombination velocity in silicon photovoltaic structures. — 2006 // Укр. фіз. журн.
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| 4. |
Sachenko A. V. Interpretation of exciton photoluminescence spectra in films with silicon quantum dots. — 2006 // Укр. фіз. журн.
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| 5. |
Roth H. The 3D mapping preparation using 2D/3D cameras for mobile robot control. — 2008 // Искусств. интеллект.
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| 6. |
Karachevtseva L. A. Photoeffect peculiarities in macroporous silicon structures. — 2010 // Хімія, фізика та технологія поверхні.
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| 7. |
Kostylyov V. P. Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells // Укр. фіз. журн.. - 2013. - 58, № 4.
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| 8. |
Sachenko A. V. Evaluation of the efficiency of interband radiative recombination in high quality Si // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 4.
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| 9. |
Sachenko A. V. Conversion efficiency in silicon solar cells with spatially non-uniform doping // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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| 10. |
Gorban A. P. Effect of emitter properties on the conversion efficiency of silicon solar cells // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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| 11. |
Gorban A. P. Effect of excitons on photoconversion efficiency in the p+-n-n+- and n+-p-p+-structures based on single-crystalline silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 12. |
Sachenko A. V. Exciton-enhanced recombination in silicon at high concentrations of charge carriers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 1.
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| 13. |
Sachenko A. V. A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 4.
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| 14. |
Korbutyak D. V. Characteristics of confined exciton states in silicon quantum wires // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 2.
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| 15. |
Sachenko A. V. Exciton effects in band-edge electroluminescence of silicon barrier structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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| 16. |
Dmitruk N. L. Investigation of the effect of external factors (heating, exposition to radiation) on the electrophysical parameters of barrier heterostructures p-AlGaAs-p-GaAs-n-GaAs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 1.
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| 17. |
Dmitruk N. L. Experimental study and theoretical analysis of photoelectric characteristics of <$E bold {{roman Al} sub x {roman Ga} sub 1-x {roman As}~-~p-{roman GaAs}~-~n-{roman GaAs}}>-based photoconverters with relief interfaces // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 1.
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| 18. |
Sachenko A. V. Modeling of photoconversion efficiency for hydrogenated amorphous Si p - i - n structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 19. |
Ivanov V. I. Photoconductivity in macroporous silicon with regular structure of macropores // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 20. |
Sachenko A. V. Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 1.
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