Пошуковий запит: (<.>A=Kladko V$<.>) |
Загальна кількість знайдених документів : 34
Представлено документи з 1 до 20
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Borcha M. D. Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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Liubchenko O. I. The effect of ion implantation on structural damage in compositionally graded AlGaN layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 1.
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Borcha M. D. Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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Vashchenko V. A. Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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Korbutyak D. V. Synthesis, luminescent and structural properties of the Cd1-xCuxS and Cd1-xZnxS nanocrystals // Журн. нано- та електрон. фізики. - 2017. - 9, № 5.
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Liubchenko O. I. Modeling of X-ray rocking curves for layers after two-stage ion-implantation // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 3.
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Liubchenko O. I. Simulation of X-ray diffraction spectra for AlN/GaN multiple quantum well structures on AlN(0001) with interface roughness and variation of vertical layers thickness // Metallophysics and Advanced Technologies. - 2018. - 40, № 6.
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Lytovchenko V. G. Preparation and study of porous Si surfaces obtained using the electrochemical method // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2017. - 20, № 4.
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Vashchenko V. A. Effect of electron-beam treatment of sensor glass substrates for SPR devices on their metrological characteristics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2019. - 22, № 4.
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| 10. |
Maslov V. P. Structure and electrical resistance of the passivating ZnSe layer on Ge // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 4.
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| 11. |
Melnichuk O. V. Peculiarities of specular infrared reflection spectra of ZnO-based ceramics // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 4.
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| 12. |
Molodkin V. B. Integrated dynamical phase-variation diffractometry of single crystals with defects of three and more types // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2023. - 26, № 1.
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Kidalov V. V. ZnO/SiC/porous-Si/Si heterostructure: obtaining and properties // Наносистеми, наноматеріали, нанотехнології : зб. наук. пр. - 2022. - 20, вип. 3.
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Gabovich A. M. Nanosized structure formation by trampoline ion-plasma sputtering // Наносистеми, наноматеріали, нанотехнології : зб. наук. пр. - 2020. - 18, вип. 2.
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Bacherikov Yu. Yu. Influence of microwave radiation on relaxation processes in silicon carbide // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2020. - 23, № 2.
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Kladko V. P. Phase transition in vanadium oxide films formed by multistep deposition // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 4.
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| 17. |
Molodkin V. B. New possibilities for phase-variation structural diagnostics of multiparametrical monocrystalline systems with defects // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2021. - 24, № 1.
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Belyaev A. E. Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 3.
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Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 20. |
Gudymenko O. Yo. Influence of small miscuts on self-ordered growth of Ge nanoislands // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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