Пошуковий запит: (<.>A=Lytvyn O$<.>) |
Загальна кількість знайдених документів : 44
Представлено документи з 1 до 20
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| 1. |
Kryshtab T. G. TiB2/GaAs and Au - TiB2/GaAs structural transformations at short-term thermal treatment. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Kuchuk A. V. Effect of nitrogen in Та - Si - N thin films on properties and diffusion barrier performances. — 2005 // Металлофизика и новейшие технологии.
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| 3. |
Valakh M. Ya. Properties and interconversion of self-induced SiGe nanoislands of different shapes. — 2006 // Укр. фіз. журн.
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| 4. |
Lytvyn O. N. Bivariate wavelet sums, constructed on the basis of Haar blending approximation and experimental data. — 2008 // Управляющие системы и машины.
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| 5. |
Shtepliuk I. I. Influence of growth conditions on structural and optical properties of Zn0,9Cd0,1O films. — 2012 // Укр. фіз. журн.
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| 6. |
Karachevtsev V. A. Glucose oxidase immobilization onto carbon nanotube networking. — 2012 // Укр. фіз. журн.
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| 7. |
Klad'ko V. P. Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 8. |
Snopok B. A. Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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| 9. |
Lytvyn O. S. Structural investigations of annealed ZnS:Cu, Ga phosphors // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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| 10. |
Svechnikov G. S. Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 2.
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| 11. |
Kaganovich E. B. Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 4.
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| 12. |
Litvinov V. L. Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 4.
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| 13. |
Konakova R. V. Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx - GaAs system // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
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| 14. |
Klad'ko V. P. Recrystallization processes in screen-printed CdS films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 15. |
Boltovets N. S. SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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| 16. |
Yukhymchuk V. O. Optical and acoustical phonon modes in superlattices with SiGe QDs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 4.
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| 17. |
Avdeev S. P. Effect of pulse thermal treatments on Ni(Ti) - n-21R(6H)-SiC contact parameters // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 3.
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| 18. |
Arsentyev I. N. New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 19. |
Boltovets N. S. Ohmic contacts to Hall sensors based on n-InSb - GaAs(i) heterostructures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2006. - 9, № 2.
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| 20. |
Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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