Пошуковий запит: (<.>A=Lytvyn P$<.>) |
Загальна кількість знайдених документів : 60
Представлено документи з 1 до 20
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| 1. |
Kryshtab T. G. TiB2/GaAs and Au - TiB2/GaAs structural transformations at short-term thermal treatment. — 1999 // Фізика напівпровідників, квант. електроніка та оптоелектроніка.
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| 2. |
Atanassova E. D. Effect of Active Actions on the Properties of Semiconductor Materials and Structures : monogr. — Kharkiv, 2007. — 215 p. - (State and Prosp. of Development for Functional Materials for Science and Technology).
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| 3. |
Hrytsenko M. I. Reorientation of a nematic in the vicinity of mechanical defects of the silicon surface. — 2004 // Укр. фіз. журн.
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| 4. |
Kutsenko A. S. Physicochemical and nonlinear-optical properties of V2O5 quantum dots and quantum rods in PVA. — 2004 // Укр. фіз. журн.
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| 5. |
Rudko G. Yu. Structural and photoluminescence properties of ZnO nanowires. — 2012 // Укр. фіз. журн.
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| 6. |
Datsenko L. I. Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 3.
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| 7. |
Prokopenko I. V. Comprehensive investigation of defects in highly perfect silicon single crystals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 8. |
Snopok B. A. Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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| 9. |
Lytvyn O. S. Structural investigations of annealed ZnS:Cu, Ga phosphors // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 1.
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| 10. |
Oberemok O. Borophosphosilicate glass component analysis by secondary neutrals mass spectrometry (SNMS) // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 1.
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| 11. |
Balovsyak S. V. Determination of surface parameters of solids by methods of X-ray total external reflection // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 1.
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| 12. |
Kaganovich E. B. Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 4.
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| 13. |
Evtukh A. A. Electron field emission from <$E bold {{roman SiO} sub x}> films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 1.
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| 14. |
Litvinov V. L. Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 4.
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| 15. |
Kladko V. P. Investigation of superlattice structure parameters by using quasi-forbidden reflections // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 3.
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| 16. |
Dzhagan V. N. Investigation of the optical and acoustical phonon modes in Si1-xGex QD SLs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2003. - 6, № 2.
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| 17. |
Konakova R. V. Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx - GaAs system // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
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| 18. |
Gritsenko M. I. Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 2.
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| 19. |
Klad'ko V. P. Recrystallization processes in screen-printed CdS films // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 20. |
Boltovets N. S. SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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