Пошуковий запит: (<.>A=Boltovets N$<.>) |
Загальна кількість знайдених документів : 29
Представлено документи з 1 до 20
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| 1. |
Boltovets N. S. Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 2. |
Boltovets N. S. Technology and experimental studies of contacts for microwave diodes based on interstitial phases // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 2.
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| 3. |
Boltovets N. S. Contacts for silicon IMPATT and pick-off diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2000. - 3, № 3.
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| 4. |
Venger Ye. F. Effect of rapid thermal annealing on properties of contacts Au - Mo - TiBx - GaAs // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 1999. - 2, № 3.
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| 5. |
Boltovets N. S. Comprehensive studies of defect production and strained states in the silicon epitaxial layers and device structures based on them // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2001. - 4, № 4.
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| 6. |
Boltovets N. S. Properties of SiO2 - GaAs and Au - Ti - SiO2 - GaAs structures used in production of transmission lines // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2002. - 5, № 2.
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| 7. |
Boltovets N. S. SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2004. - 7, № 1.
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| 8. |
Boltovets N. S. A silicon carbide thermistor // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2006. - 9, № 4.
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| 9. |
Arsentyev I. N. New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 10. |
Belyaev A. E. Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 11. |
Boltovets N. S. Ohmic contacts to Hall sensors based on n-InSb - GaAs(i) heterostructures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2006. - 9, № 2.
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| 12. |
Arsentyev I. N. Porous nanostructured InP: technology, properties, application // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2005. - 8, № 4.
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| 13. |
Belyaev A. E. Development of high-stable contact systems to gallium nitride microwave diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 4.
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| 14. |
Belyaev A. E. Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2008. - 11, № 3.
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| 15. |
Belyaev A. E. On the tunnel mechanism of current flow in Au - TiBx - n-GaN - i-Al2O3 Schottky barrier diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2007. - 10, № 3.
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| 16. |
Belyaev A. E. Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2011. - 14, № 4.
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| 17. |
Belyaev A. E. Temperature dependence of contact resistance of Au - Ti - Pd2Si - <$E bold {n sup + - roman Si}> ohmic contacts // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 4.
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| 18. |
Belyaev A. E. The features of temperature dependence of contact resistivity of Au - Ti - Pd2Si - <$E bold p sup +>-Si ohmic contacts // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2010. - 13, № 1.
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| 19. |
Sachenko A. V. Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2012. - 15, № 4.
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| 20. |
Belyaev A. E. Role of dislocations in formation of ohmic contacts to heavily doped n-Si // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - 16, № 2.
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